Fig. 4: Electrical and mechanical properties of GAFF.
a, b Schematic (a) and photograph (b) of GAFF. c Top-view optical microscope images of GAFF (left) and SEM of the cross-sectional of GAFF (right). d Sheet resistance mapping of GAFF. e Wide range of sheet resistance of GAFF obtained by modulating graphene thickness, which was growth-time dependent. Growth conditions: 500 sccm Ar, 200 sccm H2, and 40 sccm CH4 with growth time of ~35, ~40, ~45, ~50, ~60, and ~70 min under the target temperature of ~1050 °C. The error bars represent the standard deviations (n = 5). f Tensile strength of the pristine AF and GAF obtained at different graphene growth temperatures (~800, ~1000, and ~1050 °C for ~2 h). The error bars represent the standard deviations (n = 5). g Photographs of GAFF going through the series of mechanical deformations of grasping, folding, twisting, and releasing. h Infrared image of the bent GAFF-based heater (~220.1 ± 3.7 °C, input voltage of ~12 V, 10 cm × 20 cm, sheet resistance of ~2 Ω sq−1). i Temperature profiles of GAFF at different power densities. j EMI shielding mechanisms in the hierarchical conductive configuration of GAFF. k Shielding effectiveness (SET) of the GAFF shielding cabinet composed of 1–3 layers of GAFFs (GAFF thickness of ~0.27 mm, sheet resistance of ~2 Ω sq−1). Inset, photograph of GAFF shielding cabinet (20 × 20 × 20 cm3).
