Fig. 3: Tuning the interlayer exciton density.
a Normalized power dependent PL emission from the stripe gate region at Eog = 0 V/nm, when the excitation laser is slightly outside the region. The dotted white line shows a contour of 0.5 for the intensity of the trapped IEs. b Same as (a) for Eog = 0.114 V/nm. c The blueshift energy, ∆E, for Eog = 0 and 0.114 V/nm as a function of power. Right axis (blue) shows the corresponding calculated electron-hole pair density, neh. d Fitted trapped PL linewidth for Eog = 0 and 0.114 V/nm as a function of power. The error bars in (c) and (d) are from the fitting of the spectral peaks.
