Table 1 Comparison of thin-film FETs constructed with same material (BP) or similar preparation methods (wet transfer)
Material | Preparation method | Substrate | Thickness (nm) | Dimensions (µm) | On/off ratio | Field-effect mobility (cm2 V−1 s−1) | Ref. |
|---|---|---|---|---|---|---|---|
BP | PLD + wet transfer | SiO2/Si | ~5 | 104 | 3.6 × 103 | 295 | This work |
BP | PLD | Mica | 5 | 104 | ~5 × 103 | 213 | |
BP | CVD | SiO2/Si | 290 | 103 | ~105 | 6500 | |
BP | Mechanical exfoliation | SiO2/Si | ~10 | 5 | ~104 | ~100 | |
BP | Liquid exfoliation | SiO2/Si | 12 | 0.8 | ~103 | 0.58 | |
MoS2 | CVD + wet transfer | SiO2/Si | 0.91 | ~20 | 106–107 | 35 | |
MoS2 | CVD + wet transfer | SiO2/Si | 0.7 | ~40 | 108–109 | 7.6 | |
MoS2 | CVD + wet transfer | SiO2/Si | 10 | 103 | 105 | 4.5 |
