Table 1 The measured emission energy at zero applied strain (E(ε = 0)), the strain gauge factor (Ω) and the power law exponent (α) for several excitons in WSe2 and WS2

From: Strain fingerprinting of exciton valley character in 2D semiconductors

 

WSe2

WS2

 

KK

KQ

Defect

KK

ΓQ

Defect

 

X0

X+

XX

XL

X0

D0

X0

X+

XX

XL

X0

X+

XX

D0

E(ε = 0), eV

1.74

1.72

1.70

1.64

1.69*

1.60

2.08

2.05

2.03

1.97

2.09

2.06

2.04

1.76

Ω, meV/%

118

114

113

103

–34*

8

102

101

100

100

68

55

56

−6

α

0.97

1.11

1.42

0.70

0.95

0.66

0.97

0.99

1.33

0.86

1.01

1.18

1.36

0.50

  1. Note, that a pre-strain may influence the E(ε = 0). Theoretical results are noted with *.
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