Table 1 Best electrical properties of PEDOT films deposited on different substrates

From: Directed crystallization of a poly(3,4-ethylenedioxythiophene) film by an iron(III) dodecyl sulfate lamellar superstructure

Substrate

Sheet resistance (Ω sq − 1)

Thickness (nm)

Conductivity (S cm − 1)

 

Transmittance at 550 nm (%)

PET

25 ~ 44

22 ~ 42

9900 ± 200

 

90.8a

PI

30 ~ 50

20 ~ 36

9800 ± 300

 

90.6b

SiO2-wafer

37 ~ 45

22 ~ 26

10,100 ± 400

 

na

ITO-coated glass*

59.1

49.7

3400

 

92

  1. a,b From 22 nm and 24 nm thick films, respectively.
  2. *: ITO thickness = 50 nm; sheet resistance = 60 Ω sq − 1 on the specification sheet provided by iTASCO Corp., Korea.
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