Fig. 1: Operating principle and giant NDR of the dynamic molecular switch.

a Schematic illustration of the HATNA junctions that switches between a high conductive state (on-state) and a low conductive state (off-state). b Operating principle of the dynamic molecular switch in terms of energy (supplied by the applied bias voltage) diagram for the PCET process, the energy gap between the respective on and off states is indicated by χ. c Heatmap of log10 | J| vs. V of the Au-S-C10-HATNA//Ga2O3/EGaIn junctions at 24 °C, relative humidity = 80%, sweep rate of 2 mV/s. The black is the median average curve of <log10 | J | >m vs. V with on state, off state and reset regions. In all our experiments the voltage is applied to the top electrode and the bottom electrode is grounded. RPtV, the peak-to-valley ratio; VNDR, the voltage of the NDR peak; Ron/off, the on/off ratio.