Fig. 2: Electrical characteristics of the AuTS-SC10-HATNA//EGaIn junctions at different RH. | Nature Communications

Fig. 2: Electrical characteristics of the AuTS-SC10-HATNA//EGaIn junctions at different RH.

From: Molecular switching by proton-coupled electron transport drives giant negative differential resistance

Fig. 2: Electrical characteristics of the AuTS-SC10-HATNA//EGaIn junctions at different RH.

a Log10 | J| vs. V heatmap of the AuTS-SC10-HATNA//EGaIn junctions at RH = 30%, (b) RH = 60%, and (c) RH = 80%. The black line is the mean <log10 | J | >m vs. V curve. d Distribution of RPtV as a function of RH for all measured junctions. The error bars represent the standard deviations of the mean value of RPtV. e Typical J-V curves of the junction with RH increasing from 5 to 85%. All measurements were conducted at 10 mV/s. The dashed line intersecting the NDR peak is a visual guide. The red curves are the modeling fits to the data. The error bars are standard deviations for relative humidity and mean absolute deviation for RPtV. The respective values are summarized in Table S2.

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