Fig. 2: THz conductivity of p(g2T-TT).
From: Tuning direct-written terahertz metadevices with organic mixed ion-electron conductors
a Representation of the three-electrode device used to perform both electrical and THz-TDS measurements on the bare OMIEC. b Complex conductivity spectra of p(g2T-TT) at different gate biases (shaded areas correspond to the SE with a sample of 5 measurements). c Voltage dependence of the real and imaginary parts of σTHz (error bars correspond to the SE with a sample of 5 measurements). d Simulated transmission of a tuneable metasurface, where the real permittivity and the THz conductivity are varied within the ranges obtained from the THz-TDS measurements. e Comparison of the normalised transmission at resonance for the simulated and the fabricated devices, showing similar modulation depths.
