Fig. 2: Doping dependence of the electronic structure of 1T-TiSe₂.

a Energy–momentum cuts taken along the \(\bar{{\rm{M}}}\)-\(\bar{\Gamma }\) direction at different doping levels. The doping level is illustrated using the total deposition time. Red and blue curves are the calculated band dispersions based on a toy model considering a rigid band shift and the band hybridization between v and c₁ (see Supplementary Information Section 1 for more information). b Doping dependence of the energy distribution curves (EDCs) taken at \(\overline{{\rm{M}}}{+0.1{\text{\AA }}}^{-1}\). The red curve is the guide to the eyes of the energy shift of CB. c and d are the same as b but taken at \(\overline{{\rm{M}}}\) and \(\bar{\Gamma }\) point, respectively. The blue dashed curve is the guide to the eye of the energy shift of VB. The blue shaded peaks are the guides to the eyes of the change of photoemission intensity of the v band. e Doping dependence of the band gap calculated based on the EDC peak positions in (b–d). We calculated the carrier density by counting the Fermi surface volume (Supplementary Fig. 1). The estimated doping range is from 0.01 to 0.11 e⁻/u.c. The error bars are estimated based on the uncertainties of the band positions of v and c₁. All data were taken at 14 K.