Fig. 1: DUV-LEDs based on GaN templates.
From: Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters
a Schematic illustration of DUV-LEDs on GaN/sapphire templates. b, c Surface morphology evolution (AFM) of the decoupling structure, from pre-crack to filling-up. d X-ray reciprocal space mapping for the \(\left(\bar{1}015\right)\) reflection of the Al0.8Ga0.2N pre-crack and Al0.65Ga0.35N healing layer. e Photograph of the 4 inch surface crack-free DUV-LED wafer based on GaN template. f Surface crack mapping of the 4 inch DUV-LED wafer. EE edge exclusion.
