Fig. 2: Characteristics of the decoupling structure.
From: Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters
a Cross-sectional bright-field STEM image of the filled-up pre-crack. b, c Enlargement of the indicator lines at the filling thickness of 360 nm and 180 nm, respectively. d Dependence of the filling-up thickness on Al composition in the healing layer. e, f Distribution of Al and Ga atoms (EDS mapping) around the pre-crack in (a). g Compositional variation along the EDS scanning line (inset) across the filled-up pre-crack.
