Fig. 4: Performance, repeatability and stability of the USMR device.
a The output voltage with magnetization switched by current pulses with the variation of reading current I0, b The output change of voltage and resistance as a function of I0, c The repeatable writing and reading performance with positive and negative pulse current magnitude Ip around 6.5 mA and I0 = 2 mA. d The critical switching current (Voltage) \({I}_{C}({V}_{C})\) versus the width of the current pulse. e The output voltage of a typical MRAM device with the change of the writing pulse voltage between +50 V and –45 V for pulse width of 1 ns and the reading current \({I}_{0}=1.5\,{{\rm{mA}}}\) at room temperature. f \(\triangle {V}_{{xx}}^{2\omega }\) and critical switching current density as a function of temperature with I0 = 1 mA. The solid line in (d) is a linear fit.
