Fig. 2: Atomic structure and chemical composition of GdOCl nanosheets.
From: Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors
a High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image of GdOCl nanosheet. d(100) and d(110) represent the lattice spacing of (100) and (110) planes, respectively. Scale bars: 1 nm. b Integrated differential phase contrast scanning transmission electron microscopy (iDPC-STEM) image of GdOCl nanosheet. Blue, red and green spheres represent Gd, O and Cl atoms, respectively. Scale bars: 0.5 nm. c Selected area electron diffraction (SAED) pattern of GdOCl nanosheet. Scale bars: 5 1/nm. d,e Intensity line profiles along the red (d) and blue (e) rectangles in panel (c). f–h The corresponding energy dispersive X-ray spectroscopy (EDS) mapping images of Gd (f), O (g) and Cl (h) elements. Scale bars: 3 µm. i The EDS elemental analysis of GdOCl nanosheet.
