Fig. 4: The device performance of CsSnI3-SnCl2 Pero-LEDs with or without moisture treatment. | Nature Communications

Fig. 4: The device performance of CsSnI3-SnCl2 Pero-LEDs with or without moisture treatment.

From: Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs

Fig. 4: The device performance of CsSnI3-SnCl2 Pero-LEDs with or without moisture treatment.The alternative text for this image may have been generated using AI.

a Device structure illustration of the CsSnI3-based Pero-LEDs. b Current density-voltage-radiance (J–V–R) curves and (c) external quantum efficiency versus current density (EQE-J) curves of the Pero-LEDs. d Electroluminescence spectra of the Pero-LEDs with moisture treatment at different operating voltages. e Statistical results of EQEs and (f) operation lifetime test results of the Pero-LEDs.

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