Fig. 1: Flavor polarization in a r-TLG superlattice.
a The D-v phase diagram at 1.5 K. Inset: Device schematic showing the direction of displacement fields from moiréless to moiré interfaces. b Normalized Hall carrier density νH = 4nH/ns at B = ± 1 T, versus v and D. Inset: definitions of three colored dashed lines for band gap (blue), VHS (yellow) and reset (red). See details in the main text. c Profiles of carrier density (right axis) and Hall resistance (left axis) along the white dot line in (b) where phase boundaries are denoted by colored bar. d–f Correspondence between symmetry breaking and phase boundaries is evidenced in the moiré conduction band (D = 0.5 V/nm). Here, symmetry breaking among spin and valley flavors is identified by the lifted degeneracy of Landau levels associated with correlated insulators (d, e). The degeneracy is one for v = 1 and two for v = 2. The phase boundaries (bandgap, VHS and reset) can also be found at low (1 T in the upper panel of (f) and high (3 T in the lower panel) magnetic fields. g At D = −0.45 V/nm, the resistance peak of v = −2 is found to increase with parallel B fields. h The energy gap at v = −2 shows a g factor of the order of 2 in B// fields. Error bars are estimated from the uncertainty in the range of the simply activated regime. Inset: Schematic of spin polarization induced gap at half filling in parallel fields.
