Fig. 1: SiGeSn/GeSn multi-quantum-well structure.
From: Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
a Cross-sectional TEM image of the MQW together with Ge and Sn EDX elemental 2D map overlaid with the line cut Si, Ge, and Sn elemental concentrations. b Schematic 3D image of an under-etched microdisk laser without passivation. c SEM micrographs showing a (c1) microdisk after under-etching, (c2) top-view with highlighted WGM region, and (c3) cross-section of a fabricated device. d Electronic band diagram of the MQW in the optically active under-etched region. e Current-voltage characteristics of the microdisk laser for temperatures ranging from 10 K to 100 K.
