Fig. 3: Flexible sliding ferroelectric memory.
From: Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
a Left: schematic of flexible SFeM device on PET substrate. Illustration of flexible SFeM under flat (middle) and bending states (right). b Transfer characteristic curves of flexible SFeM under different test conditions, i.e., the pristine flat state before bending (black), the bending state corresponding to a tensile strain of ~1.3% (red) and the flat situation after 1000 consecutive cycles of bending test (blue). c Retention characteristics of a flexible SFeM, which is pre-programmed to the HRS (LRS) through a +10 V (−10 V) gate voltage pulse with width of 100 ms, and then read out via a 1 V source-drain bias at VGS = 0. Inset: the extrapolation of the data retention indicates that the LRS and HRS could be maintained for more than 10 years with a conductance ratio exceeding 106 even after being subjected to 103 cycles of bending. d Endurance characteristics of a flexible SFeM. The programming gate voltage pulses are alternating +10 V and −10 V in amplitude and 100 ms in width. Inset: the endurance of a flexible SFeM against the bending cycle. e, f Statistical data of conductance of LRS/HRS (e) and conductance ratio/memory window (f) from 25 devices after 1000 cycles of bending. g Comparison of our flexible SFeM with previously reported ferroelectric FET devices with 2D ferroelectric materials as the channel materials or non-ferroelectric 2D semiconductor/ferroelectric materials as the channel materials/gate insulator7,43,44,49,50,51. CIPS: CuInP2S6; PZT: Pb[Zr0.2Ti0.8]O3.
