Fig. 4: Characterization of as-grown and transferred VO2 NM. | Nature Communications

Fig. 4: Characterization of as-grown and transferred VO2 NM.

From: Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer

Fig. 4: Characterization of as-grown and transferred VO2 NM.The alternative text for this image may have been generated using AI.

a XRD 2θ-ω scan (Insets: rocking curves of as-grown and transferred VO2 NMs). b XRD φ-scan of VO2 (011) plane. c RSM at around VO2 (020) peak. The yellow dash line indicates the bulk VO2 value. These show single out-of-plane orientation and in-plane three-fold symmetry of both as-grown and transferred VO2 NM. d Left: temperature-dependent resistance change in heating and cooling cycle, showing 4 orders of magnitude of modulation. Right: first derivative of resistance to show the metal-insulator-transition (MIT) temperature (Th). e Raman spectra obtained along a line scanning of the VO2 NM ( ~ 10 μm) which confirm the monoclinic phase of both as-grown and transferred VO2 NM (The arrow represent the transfer process).

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