Fig. 4: Configuration and photovoltaic performance of IPSCs.

a Device structure of IPSC. b Cross-sectional SEM image of the Bz-PhpPACz (2.8 mM) based device (scale bar of 500 nm). c J–V curves of Bz-PhpPACz based devices. d PLQY and QFLS of perovskite films deposited on different substrates. e Surface carrier kinetics from extraction at 2.48, 2.07, and 1.77 eV probed by TR spectroscopy and fitted with a diffusion surface extraction model for perovskite deposited on Bz-PhpPACz (2.8 mM). f Distribution of SEV values and VOC values for perovskite films deposited on Bz-PhpPACz. g MPP tracking under N2 and simulated 1 sun AM 1.5 G illumination for uncooled devices (reaching an operating temperature of 65 ± 10 °C). h J–V curves of large area IPSC (Inset: Photograph of large area IPSC). i J–V curves of mini module (Inset: Photograph of mini module).