Fig. 2: Comparison of GaN facet properties. | Nature Communications

Fig. 2: Comparison of GaN facet properties.

From: Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes

Fig. 2

Overlaid topography-potential three-dimensional spatial maps of a as-grown GaN NWs and b Faceted-GaN NWs. c PEIS curves of GaN/Si and the Faceted-GaN/Si photoelectrode in 0.5 M H2SO4 (pH = 0). d Comparison of the ECSA of GaN/Si and Faceted-GaN/Si estimated from the Cdl values. e Density of states of GaN (10\(\bar{1}\bar{1}\)) and GaN (000\(\bar{1}\)). f Electron localization function analysis of GaN (10\(\bar{1}\bar{1}\)) and GaN (000\(\bar{1}\)).

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