Fig. 4: Dynamical spin pumping and spin transport in PVEO.
From: Verdazyl radical polymers for advanced organic spintronics
a Spin-pumping-induced voltage in NiFe/PVEO/Pd trilayer devices at 4 GHz for + H and −H magnetic fields. The data are fit to Eq. 8 to account for symmetric and antisymmetric voltage components. b Voltage vs. H−Hres for control NiFe/Pd sample at 4 GHz. c Voltage vs. H−Hres for NiFe/PVEO/Au samples where high spin Hall angle is replaced by small spin Hall angle Au. d Voltage vs. H − Hres for NiFe/PVEO/Cu samples where intensity of signal reduces due to small spin Hall angle of Cu. e Voltage response for NiFe/PVEO/Pd samples with variable thickness of PVEO. f The symmetric component fit to the data shown in (e). g VISHE vs. thickness (tPVEO) plot fitted to exponential decay function at 300 K. The fit to the data gives the spin diffusion length (λs) of ~105.1 ± 15 nm. The data points represent the average value for four different devices and error bar represents the standard deviation from this average. h Voltage vs. H for NiFe/PVEO/Pd samples at frequencies of 2, 4, and 6 GHz. i Frequency-dependent VISHE response from 2 to 8 GHz of NiFe/PVEO/Pd samples. Data points represent the average value of voltage from four different PVEO films of same thickness and error bars represent the standard deviation from this value.
