Fig. 1: Physical and chemical characterizations of the prepared nanoarchitectures.

a 45° tilted-view SEM image, (b) HR-TEM image, and (c) HADDF-STEM image of GaN@CMO-H. d Intensity distribution of the HADDF-STEM images of GaN@CMO-H. e GPA pattern of the stress component εxx for GaN@CMO-H based on Fig. 1d. f Elemental mapping images of GaN@CMO-H. g TOF-SIMS characterization of GaN@CMO-H vertically aligned on a silicon substrate. h The fine XPS spectra of O 1 s for GaN@CMO and GaN@CMO-H. i Transient-state PL spectra of bare GaN and GaN@CMO-H.