Fig. 3: Necking structure tailoring by the size of In droplets and the height of the jumping step.
From: Step-necking growth of silicon nanowire channels for high performance field effect transistors
a Schematic illustration of the evolution of Dneck grown via different droplet sizes, with the corresponding SEM images of the as-grown SiNWs provided in b–d. e Statistics on neck ratio. f Schematic diagram of SiNWs growing over a lower jumping step. g,h SEM images of SiNWs grown with different jumping step heights.
