Fig. 4: Comparison of SiNW FETs with step-necked and uniform channels.
From: Step-necking growth of silicon nanowire channels for high performance field effect transistors
a Short-channel transistor built upon step-necking SiNWs with Lch controlled by the height of jumping steps, where the thinner middles serve as the channel and the thicker ends act as the S/D contacts. b Improvement of device performance with step-necking SiNWs. c Illustration of the transistor based on uniform thick channels, where the source/drain contact area is proportional to the diameter of SiNWs. d Transfer characteristic of the long-channel transistor with Lch defined by lithography. e Device structure with uniform thin channels, while the Ids–Vgs curve is demonstrated in f. g,h Comparison of key performance indicators for devices with uniform thick (THK-FET), uniform thin (THN-FET), and necked SiNWs (NK-FET), respectively. i, Statistics on SS of THK-FETs and NK-FETs.
