Fig. 5: Device simulation and model analysis.
From: Step-necking growth of silicon nanowire channels for high performance field effect transistors
a Comparison of the measured Ids-Vgs curve for THK-FET and NK-FET. b Band alignments in the off state for the THK-FET extracted from the TCAD simulated model. c Potential on the uniform thick channel. d Simulated transfer curve for THK-FET and NK-FET. e Band alignments in the off-state for the NK-FET. f Partial pressure on the thin channel. g The distribution of hole carrier along the channel direction.
