Fig. 3: Device performance of CCTO-gated MoS2 devices. | Nature Communications

Fig. 3: Device performance of CCTO-gated MoS2 devices.

From: Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices

Fig. 3: Device performance of CCTO-gated MoS2 devices.

a Schematic of the device configuration. b Vds-Ids characteristics measured for one exfoliated MoS2 flake (thickness: 2.4 nm) top-gated by a transferred, 15 nm thick CCTO-550 thin film. Inset: optical image of one as-fabricated device. Scale bar: 10 μm (inset). c Transfer curves of the CCTO/MoS2 device under various Vds, showing an ultra-small SS of 67 mV dec−1. d Double-sweep transfer curve under Vds = 1 V, displaying a negligible hysteresis. e Norm. hysteresis width ΔVH versus the sweep rates under two different Vtg ranges (gold: Vtg −2 V–2 V, pink: Vtg −1 V–1 V). Inset: Norm. ΔVH as a function of Ids (sweep rate: 0.3 V/s). f A comparison of SS and Norm. ΔVH of our CCTO-gated MoS2 devices with other high-k dielectrics reported in the literature (Supplementary Table 3). Note that filled (open) symbols correspond to norm. ΔVH (ΔVH)10,13,18,39,40,42,45,46.

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