Fig. 3: Reduced ρc from increased carrier concentration for enhanced electron tunneling. | Nature Communications

Fig. 3: Reduced ρc from increased carrier concentration for enhanced electron tunneling.

From: Self-optimized contact in air-robust thermoelectric junction towards long-lasting heat harvesting

Fig. 3

a Schematic diagram of structural changes in Sb/MgAgSb with aging; b XRD patterns of Mg1-xAgSb and c probe distance dependence of resistance in Sb/Mg1-xAgSb TE junctions; d DOS of MgAgSb, Ag3Sb and Sb; temperature dependence of e S and f σ of Mg1-xAgSb; energy band diagram of the contact between metal and g normal p-type semiconductor, h p-type semiconductor with increased n and i p-type semiconductor with a high n layer, specifically for the diagram in Sb/MgAgSb after aging.

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