Fig. 3: Scaling relation between σ_xy and σ_xx of the intrinsic AH effect.

a–c μ₀H-dependent σ_xy and σ_xx for three 7-SL devices exfoliated from the same crystal. Devices #11 and #16 were obtained simultaneously in one cleaving process on the same substrate, with the former one undergoing an extra AlO_x deposition process, having a thickness of 33 nm. d–f Evolution of σ_xy with σ_xx during the cooling process. With the formation of AFM order as lowering Ts, the scaling relation between σ_xy and σ_xx at different V_gs gradually collapses into one single curve, and σ_xy saturates at e²/h. The σ_xx independent behavior reflects the typical Berry curvature-dominated mechanism of the AH effect. g Schematics of the distribution of Berry curvature. From top to bottom, as the AFM order is tuned to the FM order, the out-of-plane component of the total magnetization is enhanced. As a result, the exchange gap increases, and the Berry curvature exhibits greater robustness against thermal fluctuations.