Fig. 2: Device simulation for MoSe2-WSe2 lateral heterojunction.
From: Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures
a Schematic illustration of the simulated device structure. The MoSe2 and WSe2 regions are both 2 μm long and 6 μm wide. Gold electrodes are applied to both sides of MoSe2 and WSe2. A bias voltage Va is applied. Spatial distribution of electron and hole concentrations along the x direction (cross-section at y = 0) under reverse bias (b, Va = −9.2 V), zero bias (c, Va = 0 V), and forward bias (d, Va = 13.3 V) conditions at 258 K. e Schematic diagram of the equivalent electron temperature model. Under forward bias conditions, electrons gain energy in the electric field and transfer the energy to phonons. The electron temperature Te is determined based on the power density of Joule heating and the phonon-electron scattering rate can be calculated. The phonon-phonon scattering rate is calculated at the ambient temperature.
