Fig. 4: Temperature-dependent thermal conductivity calculations for the heterojunction.
From: Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures
a Thermal resistance-in-series model for the thermal conductivity of the heterojunction, with thermal resistances corresponding to MoSe2, WSe2, and the interface denoted as R1, R2, and Rg, respectively. b Comparison of calculated (Sim) and experimental (Exp) thermal conductivities under forward and reverse bias conditions at different ambient temperatures. The upper triangle and lower triangles represent the reverse bias (I-) and forward bias (I+) thermal conductivities, respectively. Error bars show experimental uncertainties of ±5%. The thermal conductivities in the experiment and simulation are normalized to the corresponding reverse bias thermal conductivities at 288 K (κ0).
