Fig. 4: Switching kinetics.
From: Electrochemical ohmic memristors for continual learning
a Switching time (tSET) versus applied SET voltages. The fittings of experimental data indicate three dominating factors. b Quantized conductance change in the ohmic memristive device. c Illustration of the underlying electrochemical redox processes, energy diagram for memristive switching. The various lengths and oxidation states of the conduction channel which can be achieved by the electrical programming enable the multi-bit switching capability, as shown in Fig. 1f–h.
