Table 1 Performance summary of high-performance RoHS-compatible NIR LEDs fabricated through a solution process

From: Efficient and stable near-infrared InAs quantum dot light-emitting diodes

RoHS-compliant Materials

EQE (%)

Emission peak (nm)

Peak Radiance (W Sr−1 m−2)

Stability (T50 (h) @ 50 W Sr−1 m−2)a

Reference

InAs QDs

13.3

1006

2.2

0.2 (T85)

13

Si QDs

8.6

853

~1.63

NA

14

AgAuSe QDs

15.8

1046

1.51

NA

15

CuInS2 QDs

8.1

940

13.3

<0.01

16

Sn-Perovskites

3.2

948

226

8.6

37

11.6

898

89

0.68

38

Organic radicals

9.6

800

68

NA

39

InAs QDs

20.4

905

581.4

550

This work

  1. aThe half-lifetimes (T50) at 50 W sr−1 m−2 are estimated using an empirical equation – \({({R}_{0})}^{{\rm{n}}}\) × \({T}_{50}\) = constant – where \({R}_{0}\) is the initial radiance. An acceleration factor (n) of either 2 or 1.5 is adopted for testing initial radiance larger or smaller than 50 W sr−1 m−2, respectively, following the principle of overestimating the calculated T50 at 50 W sr−1 m−2. Different operational lifetime evaluations (T85, the time when the radiance drops to 85% of its initial value) are specifically noted. NIR LEDs based on RoHS (Restriction of Hazardous Substances Directive) compliant materials, including tin-based perovskites and organometallic complexes, are also listed in the table.
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