Fig. 1: Analog AI hardware based on ECRAM technology and ECRAM Hall bar device. | Nature Communications

Fig. 1: Analog AI hardware based on ECRAM technology and ECRAM Hall bar device.

From: Unveiling ECRAM switching mechanisms using variable temperature Hall measurements for accelerated AI computation

Fig. 1

a Illustration of ECRAM technology for AI computation aiming for brain-like efficiency and functionality. ECRAM, emulating synaptic devices within the cross-point array, exhibits resistive switching based on ion migration. b ECRAM Hall-bar structure and operation methods. The gate stack of ECRAM is made up of three layers; channel, electrolyte and reservoir. ECRAM has three terminals, allowing read operation through source and drain, and write operation through gate and channel. The inset OM image depicts 11 terminals, with additional terminals fabricated between the region adjacent to the gate and the region within the channel for comparative analysis. c Transmission electron microscope image of the device cross-section. (Scale bar: 10 nm) d Conductance modulation in a ECRAM device by applying 100 potentiation and 100 depression pulses.

Back to article page