Fig. 1: Programming of the GIM 2D FGM.
a Device structure of the GIM 2D FGM. The inset shows the top view of the structure and the areas of the channel and gate are denoted as A0 and A4, respectively. MoS2, Pt, and Al2O3 are used as channel, FG, and tunnelling/blocking layer. b Dual-sweep transfer curve that shows a large counterclockwise hysteresis loop. It was tested on the device with gate area A4 = 2.31 μm2 and channel width/length of 10.37/1.47 μm (as indicated in the OM image of Fig. 2b). c Two conductance states after programming with −Vtune (deep colors) and without −Vtune (shallow colors). d, e Schematics and band diagrams of the programming and tuning process. Detailed energy values can be seen in the alignment diagram of bands in Supplementary Fig. 2. D drain, S source. f 256 states with each sampled for 100 s. The states were programmed using the bi-pulse programming method. g, h The distinguishable neighboring states at different current levels. g Enlarged current-time sampling plots at the corresponding sites denoted in (f) (in blue, red and purple, respectively). The corresponding histogram plots of the sampled currents are shown in (h). σ is the standard deviation and the fitted curves were attained by fitting with normal distribution function. i Benchmarks of the GIM 2D FGM in state number and operation voltage. FeFET ferroelectric field-effect transistor, FGM floating-gate memory. The data are collected from19,29,30,54,55,56,57,58,59,60,61,62,63,64,65,66,67,68,69,70,71,72,73.
