Fig. 1: Schematic illustrations of conventional O-T PBE and our local Cu-acceptor defect dipoles embedded O-T PBE strategy. | Nature Communications

Fig. 1: Schematic illustrations of conventional O-T PBE and our local Cu-acceptor defect dipoles embedded O-T PBE strategy.

From: Excellent hardening effect in lead-free piezoceramics by embedding local Cu-doped defect dipoles in phase boundary engineering

Fig. 1: Schematic illustrations of conventional O-T PBE and our local Cu-acceptor defect dipoles embedded O-T PBE strategy.The alt text for this image may have been generated using AI.

a For the conventional O-T PBE strategy, only d33 can be enhanced due to the easy polarization rotation and domain switching, leaving an unbalanced development of d33 and Qm. b For our local Cu-acceptor defect dipoles embedded O-T PBE strategy, both d33 and Qm can be simultaneously improved because of the coupling effect of local Cu-acceptor defect dipoles and O-T PBE. Note that PBE is the abbreviation of phase boundary engineering.

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