Fig. 5: Correlation between SS and turn-on threshold light power.
From: Ultra-weak infrared light detection based on steep-slope phototransistors
a Responsivity extracted from the photo-response measurements for conventional FET (red) and photo-tunneling transistor (black). The photo-tunneling transistor has better threshold power but lower responsivity. b Measured threshold power as a function of temperature for conventional FET (red) and photo-tunneling transistor (black). The curves can be categorized into two different regions, showing the critical role played by charge injection in determining the threshold power. c Transfer curves of the device with different top gate voltages. The SS is continuously tuned by the Vtg1. Grey dashed lines show subthreshold slopes of SS = 60 mV/dec for comparison. Vds = 0.1 V. d Measured threshold power as a function of SS corresponding to the configuration in (c). The dashed lines in (a) and (d) are described as indicating the overall trend for visual guidance.
