Fig. 4: Se NR film as a broadband circularly polarized light (CPL) photodetector.
From: Enantioselective Se lattices for stable chiroptoelectronic processing media
a, b Microscopic images of a Au (50 nm)/Cr (3 nm)/SiO2 (300 nm)/Si substrates, b L-, D-, or DL-Cys-Se / Au / Cr / SiO2 / Si substrates. c I-V curves of L- Cys-Se device under dark conditions, LCP 488 nm, RCP 488 nm, and LP 488 nm light illumination. The dotted line indicates the current when applying 10 V voltage, which is chosen for irradiation time-dependent photocurrent in the following figures (d–i) with 488 nm laser to avoid potential device degradation while maintaining a high photocurrent signal50, where the light intensity was 9 mW cm−2 after the light passed a linear polariser and a quarter-wave plate (retarder). d Photocurrent of L- Cys-Se device under dark, LCP 488 nm, RCP 488 nm, LP 488 nm irradiation as a function of illumination time. e Photoresponse of L-Cys-Se films under LCP and RCP 488 nm light, with 10-s on/off intervals. f Photocurrent as a function of light ellipticity, defined by the angle between the linear polarizer and the quarter-wave retarder. The data points represent the measured photocurrent values, and the solid line is a polynomial fit to the data. g Light intensity-dependent photocurrent and photoresponsivity at 10 V under 488 nm incident unpolarized light. h Wavelength-dependent photoresponsivity, i Calculated wavelength-dependent responsivity dissymmetry factor (gres) values of L-, D-Cys-Se CPL photodetector under LCP and RCP light illumination at 395, 405, 488, 635, 850, and 1310 nm, alongside the gCD spectra for comparison. The data points represent the average gres values, and the solid lines correspond to the gCD spectra. Error bars in (h) and (i) indicate the standard deviation.
