Fig. 1: Spin transport in GaAs quantum wells and in chiral Te crystals.
From: Efficient spin accumulation carried by slow relaxons in chiral tellurium
a Scheme of the coherent spin precession in GaAs with equal Rashba and Dresselhaus parameters (αR = αD). The inset illustrates the spin polarization of bands in this model, resulting in PST along ky. The spins are injected from the ferromagnet and travel along the x direction over a large distance. The effective spin-orbit magnetic field (Beff) along the y axis causes coherent spin precession in the xz plane, independently of scattering events. b Example of a device for generating, transmitting, and detecting spin accumulation in Te. The electric current is applied along the z axis, and the induced spin accumulation along the current direction is transmitted toward the detector. Beyond the region with the electrodes, the spin accumulation slowly decays. The inset schematically illustrates the topmost valence band of Te, enabling the efficient spin transport.
