Fig. 2: Crystal structure, electronic properties, and charge-to-spin conversion in tellurium.
From: Efficient spin accumulation carried by slow relaxons in chiral tellurium
a Crystal structure of elemental Te. The helicity of an isolated chain along the z direction corresponds to right-handed Te. b Calculated valence band structure along the kz axis close to the H point in the Brillouin zone. The color encodes the z component of the total angular momentum. Its x and y components are much smaller in magnitude and are not shown. c The three-dimensional Fermi surface at E = −20 meV consists of six dumbbell-shaped hole pockets centered in the corners of the hexagonal Brillouin zone. d A single Fermi pocket at the H point projected onto a plane parallel to the z axis, where the arrows represent the total angular momentum directions. The constant energy contours at E = −5 meV (inner) and E = −20 meV (outer) are shown. e Current-induced magnetization Mz and Mx per Te atom induced by an electric current along the z and the x axis, respectively, (jx,z = 82 A cm−2) calculated for different chemical potential values. In the realistic doping region, the red dashed line indicates the induced magnetization estimated from NMR23. The solid lines represent our calculated values using exact solutions of the Boltzmann transport equations (BTE), while the dashed dark line shows the Mz value based on the relaxation time approximation21. f Charge-to-spin conversion efficiency vs chemical potential. g Spin and orbital contributions to angular momentum density without including g-factors.
