Fig. 5: Transient thermoreflectance and partial switching measurements in Type III microheaters. | Nature Communications

Fig. 5: Transient thermoreflectance and partial switching measurements in Type III microheaters.

From: Microheater hotspot engineering for spatially resolved and repeatable multi-level switching in foundry-processed phase change silicon photonics

Fig. 5: Transient thermoreflectance and partial switching measurements in Type III microheaters.The alternative text for this image may have been generated using AI.

a Transient thermoreflectance images at the end of 400 ns pulses with varying voltages applied to the device. b Optical microscope images for the initial annealed crystalline Ge2Sb2Se4Te (GSST) and the subsequent step amorphizations and final recrystallization. The scale bar corresponds to 5 µm. c Raman spectra measured at the center of the PCM cell after annealing (black); after a 16.3 V–400 ns pulse (green); and after a 6V-400ms pulse (red). We note that the images were all taken in the same device except for the 16.3 V (fully crystallized), which corresponds to a second identical device.

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