Fig. 3: The concept of doping-band induced unipolarity and Schottky barrier realignment.
From: Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors
a, b ID-VG at VD = −0.1 V for one representative long-channel device (LCH = 780 nm) prior and post NO doping with Landauer model fitting. The solid points are experimental results, while the solid lines are fitting results with the red line describing the electron branch current and the blue line capturing the hole branch current. The extracted Schottky barrier height (SBH) for holes (ΦSB,p) was found to be approximately 0.25 eV prior doping. After NO doping, the device exhibits unipolar behavior with a substantially reduced ΦSB,p of 0.05 eV. c x-axis shifted ID-VG characteristics of devices prior and post NO doping to align the minimum current (VG=Vmin). A clear on-current enhancement and significant suppression of the electron branch current can be observed. d Illustration of the movement of the Fermi level and the realignment of the Schottky barrier (SB) induced by nitric oxide (NO) doping.
