Fig. 4: Electrical characteristics and contact resistance of scaled NO-doped 1L-WSe2 p-FETs.
From: Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors
a ID-VG at VD = -0.1 V and -1V of representative devices with LCH = 55 nm and LCH = 780 nm, both before (black) and after NO doping at 120 oC for 30 minutes (blue). The subthreshold swing (SS) is determined via the extraction of the minimum slope from the ID-VG curves. b ID-VD characteristics of representative devices with LCH = 55 nm and LCH = 780 nm for gate voltages from –4 V to -2.5 V in steps of 0.25 V. After NO doping, the on-current of short-channel device (LCH = 55 nm) at VDS = -1V reaches 300 µA/µm. c Total resistance as a function of channel length (LCH) at different overdrive voltage (VOV). Contact resistance (RC) and sheet resistance (Rsh) extraction using the transfer-length method (TLM) for NO-doped 1L-WSe2 p-FETs on 6-nm-thick HfO2 dielectric (EOT ~ 1.5 nm). Total resistance (RTOT) is extracted at VDS = -0.1 V. d RC (left axis) and Rsh (right axis) versus VOV. e Extracted conductive mobility (µcon) from TLM structure and field-effect mobility (µFE) versus VOV. Cumulative distribution function (CDF) plots of f RC and g mobility: Conductive mobility (µcon) and field-effect mobility (µFE). µcon is extracted from TLM structures and µFE is extracted from 780 nm-long-channel NO-doped 1L-WSe2 p-FETs. h Distribution of ID-VD of the short channel (LCH = 55 nm) NO-doped 1L- WSe2 p-FETs. The black line represents the total resistance (RTOT) of these representative short-channel devices.
