Table 1 Benchmarking state-of-art WSe₂ p-type transistors

Material	Doping	Contact	L_CH (nm)	R_C (Ω µm)	I_ON (µA/µm)	g_m (µS/µm)	SS (mv/dec)	On/Off	Ref.
Exf. ML (5 nm)	NO₂	Pd	500	2540	40	-	-	2.4	ref. ²⁶
Exf. ML (4 nm)	MoO₃	Pd	400	800	100			10	ref. ⁴⁶
Exf. ML (8 L)	WO_x	Ti/Pd	70	530	320	-	-	10	ref. ²⁷
Exf. 1 L	NO₂	Pd	9400	-	9	-	60	1e6	ref. ²⁵
Exf. 2 L	-	Transf. vdW Pt	-	3500 (2 L) 50000 (1 L)	-	-	-	1e5	ref. ²¹
CVD 1 L	-	Pd	600	198000	9.5	-	120	1e8	ref. ²⁴
CVD 1 L	-	Ru	200	2700	50	-	141	1e8	ref. ³⁸
CVD 1 L	MoO_x	Sb/Pt	100	750	151	-	-	-	ref. ⁷⁴
CVD 1 L	NO	Ti/Pd	65	950	300	-	220	1e6	ref. ¹³
CVD 1 L	-	Evap. vdW Pt	1500	3300 (ML) 229000 (1 L)	7.6	-	-	1e5	ref. ²²
CVD 2 L	O₂ anneal	Pt	120	664	425	100	200	1e8	ref. ⁷³
CVD 2 L	WO_x	Pd/Au	20	365000	16	-	1000	1e6	ref. ⁵¹
Exf. 5 L	-	Pt	400	5700	140	-	97	1e8	ref. ⁵⁰
CVD 1 L	NO, WO_x	Ti/Pt	180	663	545	-	550	-	ref. ⁷²
CVD 1 L	NO	Ti/Pt	55	876	320	404	119	1e9	This Work
CVD 1 L	NO	Ti/Pt	780	-	112	123	87	1e9	This Work
CVD 2 L	NO	Ti/Pt	55	390	448	470	185	4e6	This Work

“Exf.” denotes exfoliated material, while “ML” refers to multilayer devices. “Transf.” denotes transferred contact, while “Evap.” denotes evaporated contact. On-current I_ON and transconductance g_m are extracted at V_DS = -1 V. Note that the first three references reported devices that did not show typical transistor behavior with a noticeable on/off ratio. The material is also too thick to be considered atomically thin 2D channels.

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