Fig. 1: ML-interface method and the determined polar Si/AlN interfaces. | Nature Communications

Fig. 1: ML-interface method and the determined polar Si/AlN interfaces.

From: Silicon orientations to grow semi-polar AlN

Fig. 1: ML-interface method and the determined polar Si/AlN interfaces.

a Structure of GaN/AlN/Si LEDs. b Schematic representation of the ML-interface method. c–f Atomic structures of four polar Si/AlN interfaces. Simulated transmission electron microscopy (TEM) images for (110)Si | |(0001)AlN and (111)Si | |(0001)AlN are shown at the bottom of (c) and (d). The widths of the simulated TEM images are 1.6, 1.0, and 1.8 nm. The purple dashed cycles in TEM images represent the additional Al layer at the interface. Colors in the figure: Yellow balls are Si; violet balls are Al; blue balls are N.

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