Fig. 1: Structure and characterization of 16 × 16 2T2R array.

a Three-dimensional rendering of the array. b Zoomed-in three-dimensional rendering on the array. Every two FETs share the same source and connect in rows for source row selection. The gate and drain are connected in columns, respectively. The drain-source current output from the right side. c This illustration describes the current of the 2T2R unit, which is equal to the differential current flowing through the positive and negative units. The output current value reflects the conductivity value of the 2T2R unit. d The schematic diagram of the QCMNN network for the 2T2R array. e Optical image of the 2T2R array. Scale bar, 400 μm. f Transmission electron microscope and corresponding energy dispersive spectrometer image of the 2T2R unit, including MoS2 FET gate and Au/Ti/TiOx/Al2O3/Au memristor with drain connected in series. Scale bar, 20 nm (up), 10 nm (down). g The 3D mapping plot displays 16 × 16 2T2R units turn on resistance and turn off resistance mappings, with the red dots indicating the broken units which stuck in a high conductivity state.