Table 1 Complete Survey of State-of-the-Art CTM/FGM Photonic Devices

From: Heterogeneous III-V/Si micro-ring laser array with multi-state non-volatile memory for ternary content-addressable memories

Metric

J. F. Song11

C. Barrios30

I. Olivares

M. Grajower56

This work

Experimental

✓

x

x

✓

✓

Device type

Ring

Ring

Ring

Ring

Ring Laser

Memory type

FGM

FGM

CTM

CTM

CTM

Material stack

a

b

c

d

e

Switching speed

1.66 Hz

1.0 Hz

0.1 ms

N/A

5 min.

Write voltage

+20 V

+10/−5.85 V

20 V

+160 V + UV

> −8V

Erase voltage

+6 V

+100 V

−25 V

−160 V

< +8V

Write VπL

1.99

2.56

1256.6

>37.413

9.65

Erase VπL

0.60

16.2

−1570.8

−37.41

−9.65

Retention time

20 h

N/A

10 years

Few weeks

>24 h

Bits/states

1 bit

1 bit

1 bit

1 bit

2 bit

Footprint (μm2)

314

124

1257

2827

1735

ER (dB)

6

10.4

10

3.8

>35

Phase Shift

0.0631π

0.0271π

0.0002π

0.0806π

0.051π

Cycles

30

N/A

N/A

1

100

CMOS compat.

✓

✓

✓

✓ 1

✓ 1

Heterogen. Int.2

x

x

x

x

✓

  1. a: Si/poly-Si/SiO2, b: Si/SiN/SiO2, c: Si/HfO/AlO/SiO2, d: Si/SiN/SiO2, e: n-InP/Al2O3/p-Si.
  2. 1CMOS compatibility of III-V/Si devices based on Intel having a silicon photonic foundry process.
  3. 2Heterogeneous integration assumes the demonstration of integrating lasers, detectors, and optical memory on a common material platform.
  4. 3Most likely higher since the process requires UV radiation.
Back to article page