Fig. 5: Representation and characterization of the Ag/Al2O3/h-BAs-PVP/Au/PET memory device.
From: Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors
a Photograph and illustration of the fabricated memory device on the polyethylene terephthalate (PET) substrate. b Repeatable bi-directional threshold switching I–V characteristics during 100 cycles. c Repeatable bipolar memristive switching I–V curves during 10 cycles, and d Switching time and energy consumption of the switch by using single pulses for the set and reset processes, showing the entire set-reset cycle. e Pulse endurance test of 100 × 100 µm Ag/Al2O3/h-BAs-PVP/Au memristor showing over 8000 programming cycles. The applied set and read pulses are 1 V/2 ms and 0.1 V/2 ms, respectively. The interval between the set and read pulses is 2 ms. f The retention-ability test of the h-BAs-based memory device in the ON and OFF states at a reading voltage of 0.1 V. g Photo of the slip process of the device under bending strain. The bending radius (r) is 7 mm, device length while bending (d) is about 10 mm, bending angle (θ) is about 98°. h Stability of high-resistance state (HRS) and low-resistance state (LRS) after different bending cycles.
