Fig. 3: The origin of flexibility in BiTO-1.6R high-entropy films: contributions from amorphous motifs and functional nanocrystals.
a Calculated volumetric strain map and shear strain map from an amorphous model after tensile deformation (7.5% tensile strain). The amorphous model has a Sconfig identical to that of the BiTO-1.6R sample. b Comparison of the atomic configuration from an identical region (black box region marked in (a)) before and after deformation. c Experimental G(r) from the undeformed, 2.10%, and 4.08% tensile deformed BiTO-1.6R samples. d In-situ biasing and plucking setup designed to probe the electrical and mechanical response of BiTO-1.6R films. e HAADF image pairs showing the evolution of BiTO nanocrystals subjected to electrical biasing, during which the electron beam was off. f STEM snapshots showing the cyclic plucking of BiTO-1.6 thin films by a W-needle. White circles were reference particles used to track the plucking process. g HAADF images acquired from identical regions before and after plucking, revealing the migration of BiTO crystals driven by mechanical forces.
