Fig. 5: APT analysis of residual Cl. | Nature Communications

Fig. 5: APT analysis of residual Cl.

From: Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

Fig. 5

a Cl profile and b–d Cl map of the samples b without PN, c after PN for tPN followed by PNA for tPNA, d and after PN for 1.5tPN followed by PNA for tPNA. Residual Cl originating from the TiCl4 source accumulates at the interface. PN reduced the amount of residual Cl inside the gate dielectrics. (Scale bars: 10 nm in b–d). Error bars in (a) indicate 1-sigma counting statistics.

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