Table 1 Strain values of the six Si–C bonds surrounding the SiV in the presence of V3_1, V3_2, V3_3, V3_4, and V3, expressed as percentages
From: All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories
Bond | V3_1 | V3_2 | V3_3 | V3_4 | V3 |
|---|---|---|---|---|---|
a | − 1.77% | − 0.53% | − 0.47% | − 1.29% | − 2.31% |
b | − 1.38% | − 0.87% | − 0.73% | − 3.03% | − 5.78% |
c | 3.55% | − 0.55% | − 0.54% | 0.74% | 1.26% |
d | 0.03% | − 0.57% | − 0.54% | − 0.09% | 0.50% |
e | − 2.49% | − 0.13% | − 0.11% | 4.75% | 13.36% |
f | − 2.33% | − 0.48% | − 0.47% | − 1.76% | − 2.91% |
